product standards mos fet MTM761230LBF 1. drain 4. source 2. drain 5. drain 3. gate 6. drain ? absolute maximum ratings ta = 25 ? c operating ambient temperature note) *1 pulse width ? 10 ? s, duty cycle ? 1 % *2 measuring on ceramic board at 40 mm ? 38 mm ? 0.1 mm absolute maximum rating pd non-heat sink shall be made 150 mw. 1. drain 4. source 2. drain 5. drain 3. gate 6. drain page MTM761230LBF silicon p-channel mosfet ? features ? for switching low drain-source on-state resistance : rds(on) typ. = 36 m ? (vgs = -4 v) of 6 unit : mm wsmini6-f1-b sc-113da code jeita pin name D panasonic embossed type (thermo-compression sealing) : 3 000 1 vds -20 gate to source voltage vgs ? 10 drain to source voltage halogen-free / rohs compliant ? marking symbol : 9c ? packaging internal connection a v v id idp a tch 150 -3 -16 700 mw ? c drain current (pulsed) *1 tstg total power dissipation *2 pd storage temperature range channel temperature topr drain current ? low drive voltage : 2.5 v drive symbol rating unit (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? pcs / reel (standard) parameter ? c ? c -40 to +85 -55 to +150 2.1 2.0 0.7 1.7 0.13 0.2 1.3 (0.65) (0.65) 12 4 5 6 3 3 (g) (s) 4 1 (d) 2 (d) (d) 6 (d) 5 d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
product standards mos fet MTM761230LBF ? electrical characteristics ta = 25 ? c ? 3 ? c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. *1 pulse test : pulse width ? 300 ? s, duty cycle ? 2 % *2 measurement circuit for turn-on delay time / turn-off delay time page gate-source threshold voltage vth id = -1 ma, vds = -10 v drain-source on-state resistance *1 rds(on)2 id = -0.5 a, vgs = -2.5 v rds(on)1 -0.4 id = -1 a, vgs = -4 v vds = -20 v, vgs = 0 v ? a gate-source leakage current igss vgs = ? 8 v, vds = 0 v zero gate voltage drain current idss unit drain-source breakdown voltage vdss id = -1 ma, vgs = 0 v -20 v parameter symbol conditions min typ max -1 6 vds = -10 v, vgs = 0 v f = 1 mhz vdd = -10 v, vgs = 0 to -4 v id = -1 a 30 2of ? 10 -0.85 -1.3 55 36 42 70 id = -1 a, vds = -10 v, f = 1 khz reverse transfer capacitance 3.5 forward transfer admittance *1 output capacitance coss |yfs| input capacitance ciss turn-on delay time *2 1 000 100 crss 100 ton ? a ns ns s pf v m ? turn-off delay time *2 toff 250 vdd = -10 v, vgs = -4 to 0 v id = -1 a d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
product standards mos fet MTM761230LBF *2 measurement circuit for turn-on dela y time / turn-off dela y time page 3 of 6 0 v -4 v pw = 10 ? s d.c. ? 1 % vdd = -10 v id = -1 a rl = 10 ? ton toff d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
product standards mos fet MTM761230LBF technical data ( reference ) page dynamic input/output characteristics 4of6 capacitance - vds id - vds id - vgs vds - vgs rds(on) - id 10 100 -0.1 -1 drain current id (a) drain-source on-state resistance rds(on) (m ? ) -4 v vgs = -2.5 v -3 -2.5 -2 -1.5 -1 -0.5 0 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 drain-source voltage vds (v) drain current id (a) -1.5 v -2 v -2.5 v -4 v vgs = -1 v -0.5 -0.4 -0.3 -0.2 -0.1 0 -6 -5 -4 -3 -2 -1 0 gate-source voltage vgs (v) drain-source voltage vds (v) -0.5 a -1 a id = -2 a -10 -8 -6 -4 -2 0 0 5 10 15 20 25 30 total gate charge qg (nc) gate-source voltage vgs (v) vdd = -10 v 10 100 1000 10000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss -0.01 -0.008 -0.006 -0.004 -0.002 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 gate-source voltage vgs (v) drain current id (a) 25 ta = 85 - 40 d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
product standards mos fet MTM761230LBF technical data ( reference ) page 5 of rth - tsw 6 vth - ta rds(on) - ta pd - ta safe operating area -0.001 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 drain-source voltage vds (v) drain current id (a) operation in this area is limited by rds(on) ta = 25 ? c, glass epoxy board (25.4 ? 25.4 ? 0.8 mm) coated with copper foil, which has more than 300 mm 2 . 100 ms 1 s dc 1 ms 10 ms idp = -16 a 0 0.2 0.4 0.6 0.8 1 0 50 100 150 temperature ta ( ? c) total power dissipation pd (w) non-heat sink mounted on ceramic board (40 mm ? 38 mm ? 0.1 mm) 10 100 1000 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? c/w) 0 10 20 30 40 50 60 70 80 -50 0 50 100 150 temperature ( ) drain-source on-resistance rds(on) (m ? ) vgs = -2.5 v -4 v -1 -0.5 0 -50 0 50 100 150 temperature ( ) gate-source threshold voltage vth (v) d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
product standards mos fet MTM761230LBF unit : mm page 6 wsmini6-f1-b ? 6of land pattern (reference) (unit : mm) 0.13 +0.05 -0.03 1.3 0.1 2.0 0.1 (0.65) (0.65) 2.1 0.1 0 to 0.1 (0.2) 0.7 0.1 0.20 +0.05 -0.02 1.7 0.1 123 4 6 (5) (0.15) (5) 5 0.65 0.65 2.0 0.45 0.6 d o c n o . t t4 - ea - 10073 r e v i sio n . 2 e s t a b li s h e d : 2007 - 11 - 07 r e v i s e d : 2013 - 06 - 18
request for your special attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) the technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. no license is granted in and to any intellectual property right or other right owned by panasonic corporation or any other company. therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) the products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. it is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) the products and product specifications described in this book are subject to change without notice for modification and/or im- provement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (esd, eos, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. when using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) this book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202
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